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data sheet 1 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b general description the an431-b is a three-terminal adjustable shunt reg- ulator with guaranteed thermal stability over a full operation range. it features sharp turn-on characteris- tics, low temperature coeffi cient and low output imped- ance, which make it ideal substitute for zener diode in applications such as switching power supply, charger and other adjustable regulators. the output voltage of an431-b can be set to any value between v ref (2.5v) and the corresponding maximum cathode voltage. the an431-b precision reference is offered in two voltage tolerance: 0.5% and 1.0%. this ic is availabl e in sot-23 package. features programmable precise output voltage from 2.5v to 18v high stability unde r capacitive load low temperature deviation: 4.5mv typical low equivalent full-range temperature coeffi- cient with 20ppm/ o c typical sink current capacity from 1ma to 100ma low output noise wide operating range of -40 to 125 o c applications charger voltage adapter switching power supply graphic card precision voltage reference figure 1. package type of an431-b sot-23
data sheet 2 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b figure 2. pin configuration of an431-b (top view) pin configuration anode ref cathode 3 2 1 (sot-23) n package functional block diagram figure 3. functional block diagram of an431-b ref v ref cathode anode + - 1 2 3
data sheet 3 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b ordering information circuit type voltage tolerance b: 1.0% a: 0.5% g1: green an431 - b: an431-b (20v) package n: sot-23 tr: tape &reel package tempe rat ure range voltage tolerance part number marking id packing type sot-23 -40 to 125 o c 0.5% AN431AN-BTRG1 gb3 tape & reel 1.0% an431bn-btrg1 gb4 tape & reel bcd semiconductor's products, as designated with "g1" suffix in the pa rt number, are rohs compliant and green.
data sheet 4 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b parameter symbol value unit cathode voltage v ka 20 v cathode current range (continuous) i ka -100 to 150 ma reference input current range i ref 10 ma power dissipation p d 370 mw junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c esd (human body model) esd 2000 v parameter symbol min max unit cathode voltage v ka v ref 18 v cathode current i ka 1.0 100 ma operating ambient temperature range t a -40 125 o c recommended operating conditions note 1: stresses greater than those listed under "abs olute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operat ion of the device at these or any other conditions beyond those indicated under "recommended operating conditions " is not implied. exposure to "absolute maximum ratings" for extended periods ma y affect device reliability. absolute maximum ratings (note 1)
data sheet 5 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b electrical characteristics parameter test circuit symbol conditions min typ max unit reference voltage 0.5% 4 v ref v ka =v ref, i ka =10ma 2.487 2.500 2.512 v 1.0% 2.475 2.500 2.525 deviation of re ference voltage over full temperature range 4 ? v ref v ka =v ref i ka = 10ma 0 to 70 o c 4.5 8 mv -40 to 85 o c 4.5 10 -40 to 125 o c 4.5 16 ratio of change in reference voltage to the change in cathode voltage 5 ? v ref ? v ka i ka =10ma ? v ka = 10v to v ref -1.0 -2.7 mv/ v ? v ka = 18v to 10v -0.5 -2.0 reference current 5 i ref i ka =10ma, r1=10k ? , r2= 0.7 4 a deviation of reference current over full temperature range 5 ? i ref i ka =10ma, r1=10k ? , r2= t a =-40 to 125 o c 0.4 1.2 a minimum cathode current for regulation 4 i ka (min) v ka =v ref 0.4 1.0 ma off-state cathode current 6 i ka (off) v ka =18v, v ref =0 0.05 1.0 a dynamic impedance 4 z ka v ka =v ref , i ka =1 to 100ma f 1.0khz 0.2 0.5 ? thermal resistance jc sot-23 177.65 o c/w operating conditions: t a =25 o c, unless otherwise specified.
data sheet 6 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b figure 4. test circuit 4 for v ka =v ref figure 5. test circuit 5 for v ka >v ref figure 6. test circuit 6 for i off i off v in v ka electrical characteristics (continued) v in v ka r1 i ka v ref v in v ka i ka r1 r2 v ref v ka =v ref (1+r1/r2)+ i ref *r1 i ref r3
data sheet 7 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b figure 7. reference voltage vs. ambient temperature figure 8. reference current vs. ambient temperature figure 9. cathode current vs. cathode voltage figure 10. cathode current vs. cathode voltage -60 -40 -20 0 20 40 60 80 100 120 140 2.485 2.490 2.495 2.500 2.505 2.510 reference voltage (v) ambient temperature ( o c) v ka = v ref i ka = 10ma -60 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 r 1 =10k,r 2 =infinite i ka =10ma reference current ( a) ambient temperature ( 0 c) -2-10123 -100 -50 0 50 100 150 cathode current (ma) cathode voltage (v) v ka =v ref t a =25 0 c -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 -200 0 200 400 600 800 cathode current ( a) cathode voltage (v) v ka =v ref t a =25 0 c typical performance characteristics
data sheet 8 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b figure 11. off-state cathode current vs. figure 12. ratio of delta reference voltage to the figure 13. small signal voltage gain vs. frequency ambient temperature ratio of delta cathode voltage -40-20 0 20406080100120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 off-state cathode current ( a) ambient temperature ( o c) v ka =18v v ref =0 -40-20 0 20406080100120 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 v ka =3.5v to 18v ? v ref / ? v ka (mv/v) ambient temperature ( o c) typical performance ch aracteristics (continued) 10 f 8.2k 15k i ka output 242 gnd 1k 10k 100k 1m -10 0 10 20 30 40 50 60 70 voltage gain (db) small signal frequency (hz) t a =25 0 c i ka =10ma
data sheet 9 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b figure 15. reference impedance vs. frequency 1k 10k 100k 1,000k 0.1 1 10 reference impedance ( ? ) frequency (hz) i ka =10ma t a =25 o c gnd output 50 1k i ka typical performance ch aracteristics (continued) figure 16. stability boundary conditions vs. load capacitance i ka r1 (10k) r2 150 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 v ka =10v:no oscillation v ka =15v:no oscillation stable cathode current (ma) load capacitance ( f) v ka =v ref v ka =5v stable
data sheet 10 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b figure 18. pulse response of input and output voltage pulse generator f=100khz 220 50 output gnd typical performance ch aracteristics (continued) 0246 0 1 2 3 4 5 input input and output voltage (v) time ( s) output
data sheet 11 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b v in v out r4 r1 r2 v ref r3 an431-b i out v in an431-b r2 r1 figure 19. shunt regulator figure 20. high current shunt regulator v out =(1+r2/r3)*v ref i out = v ref /r2 + i ka figure 21. current source or current limit typical application v in v out r1 r2 v ref an431-b r3 v out =(1+r1/r2)*v ref
data sheet 12 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b figure 23. pwm converter with reference figure 22. precision 5v 1a regulator typical applicat ion (continued) az1117 v in v out adjust 8.2k an431-b r1 r2 r3 250 250 5v, 1a pwm controller c1 r1 r2 680 u2 3 4 ps521 c2 2 r3 r4 r5 v out an431-b q1 comp vfb
data sheet 13 jan. 2011 rev. 1. 0 bcd semiconductor manufacturing limited adjustable precision shunt regulators an431-b mechanical dimensions sot-23 unit: mm(inch) 2.300(0.091) 2.500(0.098) 1.200(0.047) 1.400(0.055) 0.920(0.036) 0.980(0.039) 0.390(0.015) 0.450(0.018) 1.900(0.075)ref 2.800(0.110) 3.000(0.118) 2.0 3.0 0.500(0.020) 0.700(0.028) 1.050(0.041)ref 0.020(0.001) 0.100(0.004) 0.900(0.035) 1.100(0.043) 4 r0.100(0.004) 7.0 7.0 0.550(0.022)ref 0.200(0.008)min 0.100(0.004) gauge plane 0.080(0.003) 0.150(0.006) r0.100(0.004) 0.0 ~ 10.0
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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